Epitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)

摘要

We report the epitaxial growth of CdCr2Se4, an n-type ferromagneticsemiconductor, on both GaAs and GaP(001) substrates, and describe thestructural, magnetic and electronic properties. Magnetometry data confirmferromagnetic order with a Curie temperature of 130 K, as in the bulk material.The magnetization exhibits hysteretic behavior with significant remanence, andan in-plane easy axis with a coercive field of ~125 Oe. Temperature dependenttransport data show that the films are semiconducting in character and n-typeas grown, with room temperature carrier concentrations of n ~ 1 x 10^18 cm-3.